features applications 1 h igh diode semiconductor HDK3401A ?? ? marking: sot-23-3l plastic-encapsulate mosfet d g sot- 23 - 3 l ? r1a p roduct summary s high dense cell design for extremely low r ds(on) exceptional on-resistance and maximum dc current capability load/power switching interfacing switching p - channel mosfet v (br)dss r ds(on) max i d - 30 v 60 m @ - 10 v ? -4.2 a ? 70 m @ - 4 .5v 85 m @ - 2 . 5 v parameter symbol value unit drain-source voltage v ds -30 v gate-source voltage v gs 12 v conti nuo us dr ain c u rrent i d -4.2 a power dissipation p d 4 5 0 mw thermal resistance from junction to ambient ( t<5s )r ja 3 13 /w junctio n t e mperature t j 150 storage temperature t stg -55~+150
2 h igh diode semiconductor electrical ch aracteristics (t a =25 unless otherwise noted) parameter symbol test conditi on min typ max unit off characteristics drain-source breakd o wn voltage v (br)dss v gs = 0v, i d =-250a -30 v zero gate voltage drain curre nt i dss v ds =-24v,v gs = 0v -1 a gate-source leakage current i gss v gs =12v, v ds = 0v 100 na on characteristics v gs =-10v, i d =-4.2a 60 m ? v gs =-4.5v, i d =-4a 70 m ? drain-source on-resistan ce (note 1) r ds(on) v gs =-2.5v,i d =-1a 85 m ? forward tranc o nductance (note 1) g fs v ds =-5v, i d =-5a 7 s gate threshold voltage v gs(th) v ds =v gs , i d =-250a -0.7 -1.3 v dynamic cha r acteristics (note 2) input capacitance c iss 1050 pf output capacitance c oss 127 pf reverse transfer capacitance c rss v ds =-15v,v gs =0v,f =1mhz 85 pf switching cha r acteristics (note 2) turn-on delay ti me t d(on) 6.5 ns turn-on rise time t r 3.5 ns turn-off delay time t d(off) 40 ns turn-off fall time t f v gs =-10v,v ds =-15v, r l =3.6 ? ,r gen =6 ? 13 ns drain-source d iode characteristics and maximum ratings diode forward voltag e (note 1 ) v sd i s =-1a,v gs =0v -1 v note : 1. pulse test : pulse wi dth 300s, duty cycle 2%. 2. these parameters have no way to verify.
h l j k ' l r g h 6 h p l f r q g x f w r u 7 \ s l f d o & k d u d f w h u l v w l f v 3 x o v h g 7 d v sd i s ? ? 7 d 6 2 8 5 & ( & 8 5 5 ( 1 7 , 6 $ 6 2 8 5 & ( 7 2 ' 5 $ , 1 9 2 / 7 $ * ( 9 6 ' 9 9 * 6 9 9 9 9 * 6 9 9 * 6 9 output c haracteristics 9 * 6 9 ' 5 $ , 1 & 8 5 5 ( 1 7 , ' $ ' 5 $ , 1 7 2 6 2 8 5 & ( 9 2 / 7 $ * ( 9 ' 6 9 7 d 3 x o v h g 9 * 6 9 9 * 6 9 9 * 6 9 7 d 3 x o v h g 2 1 5 ( 6 , 6 7 $ 1 & ( 5 ' 6 2 1 p : ' 5 $ , 1 & 8 5 5 ( 1 7 , ' $ i d ?? r ds(on) 3 x o v h g 7 d 7 d 2 1 5 ( 6 , 6 7 $ 1 & ( 5 ' 6 2 1 p : * $ 7 ( 7 2 6 2 8 5 & ( 9 2 / 7 $ * ( 9 * 6 9 v gs ?? r ds(on) , ' $ 9 ' 6 9 3 x o v h g ' 5 $ , 1 & 8 5 5 ( 1 7 , ' $ * $ 7 ( 7 2 6 2 8 5 & ( 9 2 / 7 $ * ( 9 * 6 9 t r an sf er c h aract eristics 7 d 7 d , ' x $ threshold vol t age 7 + 5 ( 6 + 2 / ' 9 2 / 7 $ * ( 9 7 + 9 - 8 1 & 7 , 2 1 7 ( 0 3 ( 5 $ 7 8 5 ( 7 m
4 jshd jshd h igh diode semiconductor package outline dimensions sot-23-3l suggested pad layout sot-23-3l min. max. min. max. a 1.050 1.250 0.041 0.049 a1 0.000 0.100 0.000 0.004 a2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 d 2.820 3.020 0.111 0.119 e1 1.500 1.700 0.059 0.067 e 2.650 2.950 0.104 0.116 e e1 1.800 2.000 0.071 0.079 l 0.300 0.600 0.012 0.024 080 8 symbol dimensions in millimeters dimensions in inches 0.950(bsc) 0.037(bsc)
reel taping specifications for surface mount devices-sot-23-3l h igh diode semiconductor 5
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